STGWA100H65DFB2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP, 650 V, 1
$7.20
Available to order
Reference Price (USD)
1+
$7.20000
500+
$7.128
1000+
$7.056
1500+
$6.984
2000+
$6.912
2500+
$6.84
Exquisite packaging
Discount
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The STGWA100H65DFB2 Single IGBT from STMicroelectronics redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. STMicroelectronics stands behind every STGWA100H65DFB2 with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 145 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
- Power - Max: 441 W
- Switching Energy: 2.2mJ (on), 1.4mJ (off)
- Input Type: Standard
- Gate Charge: 288 nC
- Td (on/off) @ 25°C: 30ns/130ns
- Test Condition: 400V, 100A, 2.2Ohm, 15V
- Reverse Recovery Time (trr): 123 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
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