STGWA20H65DFB2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP 650 V, 20
$3.10
Available to order
Reference Price (USD)
1+
$3.10000
500+
$3.069
1000+
$3.038
1500+
$3.007
2000+
$2.976
2500+
$2.945
Exquisite packaging
Discount
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Enhance your electronic designs with STGWA20H65DFB2 Single IGBTs from STMicroelectronics, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. STMicroelectronics's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
- Power - Max: 147 W
- Switching Energy: 265µJ (on), 214µJ (off)
- Input Type: Standard
- Gate Charge: 56 nC
- Td (on/off) @ 25°C: 16ns/78.8ns
- Test Condition: 400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 215 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
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