STGWA75M65DF2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SE
$7.30
Available to order
Reference Price (USD)
1+
$6.19000
10+
$5.59300
100+
$4.65400
600+
$4.02063
1,200+
$3.45280
3,000+
$3.30720
Exquisite packaging
Discount
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Discover high-performance STGWA75M65DF2 Single IGBTs from STMicroelectronics, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, STGWA75M65DF2 ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Power - Max: 468 W
- Switching Energy: 690µJ (on), 2.54mJ (off)
- Input Type: Standard
- Gate Charge: 225 nC
- Td (on/off) @ 25°C: 47ns/125ns
- Test Condition: 400V, 75A, 3.3Ohm, 15V
- Reverse Recovery Time (trr): 165 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
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