STGWT80H65DFB
STMicroelectronics
STMicroelectronics
IGBT 650V 120A 469W TO3P-3L
$5.17
Available to order
Reference Price (USD)
1+
$7.50000
30+
$6.45767
120+
$5.60700
510+
$4.88251
1,020+
$4.25250
Exquisite packaging
Discount
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Enhance your electronic designs with STGWT80H65DFB Single IGBTs from STMicroelectronics, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. STMicroelectronics's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
- Power - Max: 469 W
- Switching Energy: 2.1mJ (on), 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 414 nC
- Td (on/off) @ 25°C: 84ns/280ns
- Test Condition: 400V, 80A, 10Ohm, 15V
- Reverse Recovery Time (trr): 85 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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