STI6N80K5
STMicroelectronics
STMicroelectronics
MOSFET N-CH 800V 4.5A I2PAK
$1.33
Available to order
Reference Price (USD)
1,000+
$1.28520
Exquisite packaging
Discount
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STI6N80K5 by STMicroelectronics is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, STI6N80K5 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
- Vgs (Max): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK (TO-262)
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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