STP12N120K5
STMicroelectronics

STMicroelectronics
MOSFET N-CH 1200V 12A TO220
$12.43
Available to order
Reference Price (USD)
1+
$11.33000
50+
$9.42540
100+
$8.57740
500+
$7.30524
1,000+
$6.45713
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose STP12N120K5 by STMicroelectronics. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with STP12N120K5 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3