STP7N65M2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 5A TO220
$1.48
Available to order
Reference Price (USD)
1+
$2.09000
50+
$1.71120
100+
$1.55110
500+
$1.23094
1,000+
$1.03887
2,500+
$0.97485
5,000+
$0.94284
Exquisite packaging
Discount
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Upgrade your electronic designs with STP7N65M2 by STMicroelectronics, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, STP7N65M2 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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