STW35N60DM2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 28A TO247
$7.07
Available to order
Reference Price (USD)
1+
$5.97000
30+
$4.79667
120+
$4.37017
510+
$3.53878
1,020+
$2.98452
2,520+
$2.83529
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose STW35N60DM2 by STMicroelectronics. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with STW35N60DM2 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 210W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
Texas Instruments
CSD17578Q3AT
Fairchild Semiconductor
FDS2170N3
Diodes Incorporated
BSS123WQ-7-F
Nexperia USA Inc.
PXN7R7-25QLJ
Toshiba Semiconductor and Storage
TK20N60W,S1VF
Fairchild Semiconductor
HUF76132S3ST
onsemi
NTMFSC1D6N06CL
IXYS
IXFH42N50P2
Toshiba Semiconductor and Storage
SSM5N15FU,LF
STMicroelectronics