STW40N65M2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 32A TO247
$6.55
Available to order
Reference Price (USD)
1+
$6.14000
30+
$4.99933
120+
$4.58683
510+
$3.78200
1,020+
$3.24548
2,520+
$3.10103
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with STW40N65M2, a premium Transistors - FETs, MOSFETs - Single from STMicroelectronics. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust STW40N65M2 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
Infineon Technologies
IGW40N60TP
Infineon Technologies
IPZ60R099C7XKSA1
Nexperia USA Inc.
PSMN7R0-100BS,118
IXYS
IXTA30N25L2
Nexperia USA Inc.
PSMN027-100PS,127
Vishay Siliconix
SI1032X-T1-GE3
Diodes Incorporated
ZVP1320FQTA
IXYS
IXTY1R4N100P
Sanyo
2SK1460LS
Vishay Siliconix