SVD5865NLT4G
onsemi
onsemi
MOSFET N-CH 60V 10A/46A DPAK
$0.36
Available to order
Reference Price (USD)
1+
$0.36134
500+
$0.3577266
1000+
$0.3541132
1500+
$0.3504998
2000+
$0.3468864
2500+
$0.343273
Exquisite packaging
Discount
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Upgrade your electronic designs with SVD5865NLT4G by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SVD5865NLT4G ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 16mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 71W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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