TF252TH-4A-TL-H
onsemi
onsemi
JFET N-CH 1MA 100MW
$0.07
Available to order
Reference Price (USD)
1+
$0.07000
500+
$0.0693
1000+
$0.0686
1500+
$0.0679
2000+
$0.0672
2500+
$0.0665
Exquisite packaging
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For designers requiring robust EMC performance, onsemi's TF252TH-4A-TL-H JFET transistors incorporate advanced shielding against RF interference without compromising transconductance. The patented guard ring design reduces substrate noise coupling by 18dB compared to conventional models. Ideal for spectrum analyzers and base station equipment where signal purity is paramount. Register for our engineer portal to access SPICE models and evaluation board schematics featuring these innovative components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 140 µA @ 2 V
- Current Drain (Id) - Max: 1 mA
- Voltage - Cutoff (VGS off) @ Id: 100 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
- Resistance - RDS(On): -
- Power - Max: 100 mW
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Lead
- Supplier Device Package: VTFP
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