TF262TH-5-TL-H
onsemi
onsemi
JFET N-CH 1MA 100MW
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The TF262TH-5-TL-H from onsemi sets new standards in JFET reproducibility, with batch-to-batch VGS(off) variations under 2% for automated production lines. These transistors feature laser-trimmed geometries ensuring identical transfer characteristics in matched pairs for differential amplifiers. Industrial automation and process control systems benefit from this exceptional consistency. Join our preferred partner program for dedicated technical support and early access to new JFET developments.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 210 µA @ 2 V
- Current Drain (Id) - Max: 1 mA
- Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 2V
- Resistance - RDS(On): -
- Power - Max: 100 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Lead
- Supplier Device Package: VTFP
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