TJ80S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 40V 80A DPAK
$0.51
Available to order
Reference Price (USD)
2,000+
$0.91000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with TJ80S04M3L(T6L1,NQ, a reliable Transistors - FETs, MOSFETs - Single by Toshiba Semiconductor and Storage. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, TJ80S04M3L(T6L1,NQ meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
- Vgs (Max): +10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds: 7770 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SI7390DP-T1-E3
Infineon Technologies
IRFS4227TRLPBF
STMicroelectronics
STH22N95K5-2AG
Renesas Electronics America Inc
UPA650TT-E1-A
Fairchild Semiconductor
FQA15N70
onsemi
NTD70N03RT4G
Rectron USA
RM8N650IP
Micro Commercial Co
MCU30N02-TP
Goford Semiconductor
5N20A
Fairchild Semiconductor