TJ8S06M3L,LXHQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 60V 8A DPAK
$1.00
Available to order
Reference Price (USD)
1+
$1.00000
500+
$0.99
1000+
$0.98
1500+
$0.97
2000+
$0.96
2500+
$0.95
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
TJ8S06M3L,LXHQ by Toshiba Semiconductor and Storage is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, TJ8S06M3L,LXHQ ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Vgs (Max): +10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 27W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
IRFPE50PBF
Microchip Technology
APT5017SVRG
onsemi
NTD6415AN-1G
onsemi
NTP85N03
onsemi
NTLJS7D2P02P8ZTAG
Fairchild Semiconductor
FCPF2250N80Z
Vishay Siliconix
IRF9630PBF-BE3
Infineon Technologies
IPD60R2K0C6ATMA1
Nexperia USA Inc.
PMN70XPX
Rohm Semiconductor