TK090U65Z,RQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DTMOS VI TOLL PD=230W F=1MHZ
$5.23
Available to order
Reference Price (USD)
1+
$5.23000
500+
$5.1777
1000+
$5.1254
1500+
$5.0731
2000+
$5.0208
2500+
$4.9685
Exquisite packaging
Discount
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Enhance your circuit performance with TK090U65Z,RQ, a premium Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust TK090U65Z,RQ for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.27mA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL
- Package / Case: 8-PowerSFN
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