TK100A10N1,S4X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 100A TO220SIS
$4.17
Available to order
Reference Price (USD)
1+
$4.01000
50+
$3.21980
100+
$2.93360
500+
$2.37546
1,000+
$2.00340
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Toshiba Semiconductor and Storage presents TK100A10N1,S4X, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, TK100A10N1,S4X delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
Related Products
onsemi
FDP65N06
Infineon Technologies
IRFS7437TRL7PP
IXYS
IXTP60N10T
Microchip Technology
APT6013LLLG
STMicroelectronics
STL9P3LLH6
Diodes Incorporated
DMPH4023SK3-13
Vishay Siliconix
SI7326DN-T1-GE3
Infineon Technologies
IRLR2905TRLPBF
Fairchild Semiconductor
IRFU430BTU
Infineon Technologies