TK110A65Z,S4X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 24A TO220SIS
$4.43
Available to order
Reference Price (USD)
1+
$4.43000
500+
$4.3857
1000+
$4.3414
1500+
$4.2971
2000+
$4.2528
2500+
$4.2085
Exquisite packaging
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Toshiba Semiconductor and Storage presents TK110A65Z,S4X, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, TK110A65Z,S4X delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.02mA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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