TK17V65W,LQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR
$3.26
Available to order
Reference Price (USD)
1+
$3.26000
500+
$3.2274
1000+
$3.1948
1500+
$3.1622
2000+
$3.1296
2500+
$3.097
Exquisite packaging
Discount
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Discover TK17V65W,LQ, a versatile Transistors - FETs, MOSFETs - Single solution from Toshiba Semiconductor and Storage, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 4-DFN-EP (8x8)
- Package / Case: 4-VSFN Exposed Pad
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