TK22E10N1,S1X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N CH 100V 52A TO220
$1.42
Available to order
Reference Price (USD)
1+
$1.37000
50+
$1.09200
100+
$0.95550
500+
$0.74100
1,000+
$0.58500
2,500+
$0.54600
Exquisite packaging
Discount
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Upgrade your electronic designs with TK22E10N1,S1X by Toshiba Semiconductor and Storage, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, TK22E10N1,S1X ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 4V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 72W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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