TK31E60X,S1X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 30.8A TO220
$5.40
Available to order
Reference Price (USD)
1+
$5.19000
50+
$4.17160
100+
$3.80070
500+
$3.07764
1,000+
$2.59560
Exquisite packaging
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TK31E60X,S1X by Toshiba Semiconductor and Storage is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, TK31E60X,S1X ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 88mOhm @ 9.4A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
- FET Feature: Super Junction
- Power Dissipation (Max): 230W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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