TK42E12N1,S1X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N CH 120V 88A TO-220
$1.09
Available to order
Reference Price (USD)
1+
$1.09340
500+
$1.082466
1000+
$1.071532
1500+
$1.060598
2000+
$1.049664
2500+
$1.03873
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance TK42E12N1,S1X from Toshiba Semiconductor and Storage, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, TK42E12N1,S1X delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9.4mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
Renesas Electronics America Inc
UPA2714GR-E1-A
STMicroelectronics
STW56N65M2
onsemi
NTD4806NAT4G
STMicroelectronics
STW70N60M2-4
Microchip Technology
DN2450N8-G
Panasonic Electronic Components
FJ6K01010L
STMicroelectronics
STP10NK60Z
Renesas Electronics America Inc
2SK1667-E
Vishay Siliconix
SISS42LDN-T1-GE3
IXYS