TK62N60W,S1VF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 61.8A TO247
$15.62
Available to order
Reference Price (USD)
1+
$14.87000
30+
$12.50600
120+
$11.49200
510+
$9.80200
1,020+
$9.46400
Exquisite packaging
Discount
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Boost your electronic applications with TK62N60W,S1VF, a reliable Transistors - FETs, MOSFETs - Single by Toshiba Semiconductor and Storage. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, TK62N60W,S1VF meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 30.9A, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 3.1mA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
- FET Feature: Super Junction
- Power Dissipation (Max): 400W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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