TK6A80E,S4X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 800V 6A TO220SIS
$1.98
Available to order
Reference Price (USD)
1+
$1.89000
50+
$1.52760
100+
$1.37480
500+
$1.06926
1,000+
$0.88595
2,500+
$0.85540
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with TK6A80E,S4X, a premium Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust TK6A80E,S4X for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
Related Products
Rectron USA
RM16P60LD
Infineon Technologies
BSZ035N03LSGATMA1
Vishay Siliconix
SISS08DN-T1-GE3
Infineon Technologies
IRFS3206TRRPBF
Renesas Electronics America Inc
N0439N-S19-AY
Fairchild Semiconductor
FDME0106NZT
Vishay Siliconix
SQD40030E_GE3
Microchip Technology
APT10050JVFR
Renesas Electronics America Inc
2SJ325-AZ
Alpha & Omega Semiconductor Inc.