TK7A60W,S4VX
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 7A TO220SIS
$1.70
Available to order
Reference Price (USD)
50+
$1.55000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
TK7A60W,S4VX by Toshiba Semiconductor and Storage is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, TK7A60W,S4VX ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
- FET Feature: Super Junction
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
Related Products
Vishay Siliconix
SI1070X-T1-GE3
Diotec Semiconductor
DI040P04PT-AQ
STMicroelectronics
STB80NF03L-04T4
Nexperia USA Inc.
BUK662R4-40C,118
STMicroelectronics
STW32NM50N
Renesas Electronics America Inc
RJK0366DPA-00#J0
onsemi
FQP8N80C
IXYS
IXTP44P15T
onsemi
NVHL040N120SC1
Alpha & Omega Semiconductor Inc.