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TPH2R003PL,LQ

Toshiba Semiconductor and Storage
TPH2R003PL,LQ Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 100A 8SOP
$0.99
Available to order
Reference Price (USD)
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$0.9801
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$0.9702
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$0.9603
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$0.9504
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$0.9405
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 830mW (Ta), 116W (Tc)
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN

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