TPH4R50ANH,L1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N CH 100V 60A SOP ADV
$2.95
Available to order
Reference Price (USD)
5,000+
$1.27400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with TPH4R50ANH,L1Q, a reliable Transistors - FETs, MOSFETs - Single by Toshiba Semiconductor and Storage. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, TPH4R50ANH,L1Q meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
Related Products
onsemi
FDS8447
Rectron USA
RM70P30DF
Infineon Technologies
SPA06N60C3XKSA1
Vishay Siliconix
SIHB30N60ET1-GE3
STMicroelectronics
STP20NK50Z
Infineon Technologies
IPA075N15N3GXKSA1
Sanyo
2SJ652-RA11
IXYS
IXFH88N30P
Nexperia USA Inc.
PSMN1R6-30MLHX
Vishay Siliconix