TPH4R50ANH1,LQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET 100V 4.5MOHM SOP-ADV(N)
$1.72
Available to order
Reference Price (USD)
1+
$1.72000
500+
$1.7028
1000+
$1.6856
1500+
$1.6684
2000+
$1.6512
2500+
$1.634
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with TPH4R50ANH1,LQ, a premium Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust TPH4R50ANH1,LQ for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5.75)
- Package / Case: 8-PowerTDFN
Related Products
Alpha & Omega Semiconductor Inc.
AO3407A
Diodes Incorporated
DMN2065UWQ-7
Infineon Technologies
BSC070N10NS3GATMA1
STMicroelectronics
STL12N60M6
Vishay Siliconix
SI3410DV-T1-GE3
Vishay Siliconix
SISS02DN-T1-GE3
onsemi
2SK4065-DL-1E
Infineon Technologies
AUIRLR120NTRL
onsemi
NVMYS021N06CLTWG
Infineon Technologies