TPN30008NH,LQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 80V 9.6A 8TSON
$0.97
Available to order
Reference Price (USD)
3,000+
$0.34075
6,000+
$0.32900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with TPN30008NH,LQ, a reliable Transistors - FETs, MOSFETs - Single by Toshiba Semiconductor and Storage. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, TPN30008NH,LQ meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta), 27W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.3x3.3)
- Package / Case: 8-PowerVDFN
Related Products
Infineon Technologies
IRF7862TRPBF
IXYS
IXTT240N15X4HV
Infineon Technologies
IPB60R060C7ATMA1
PN Junction Semiconductor
P3M06060G7
Infineon Technologies
IRFP4468PBF
IXYS
IXTA3N120-TRR
STMicroelectronics
STP36N55M5
Infineon Technologies
SPI20N65C3XKSA1
Alpha & Omega Semiconductor Inc.
AOTF296L
STMicroelectronics