TQM110NB04DCR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
40V, 50A, DUAL N-CHANNEL POWER M
$3.88
Available to order
Reference Price (USD)
1+
$3.88000
500+
$3.8412
1000+
$3.8024
1500+
$3.7636
2000+
$3.7248
2500+
$3.686
Exquisite packaging
Discount
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Optimize your electronic circuits with Taiwan Semiconductor Corporation s TQM110NB04DCR RLG, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how TQM110NB04DCR RLG can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1354pF @ 20V
- Power - Max: 2.5W (Ta), 58W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PDFNU (5x6)
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