TQM250NB06CR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 60V 7A/32A 8PDFNU
$2.62
Available to order
Reference Price (USD)
1+
$2.62000
500+
$2.5938
1000+
$2.5676
1500+
$2.5414
2000+
$2.5152
2500+
$2.489
Exquisite packaging
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Experience the power of TQM250NB06CR RLG, a premium Transistors - FETs, MOSFETs - Single from Taiwan Semiconductor Corporation. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, TQM250NB06CR RLG is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1396 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 8-PDFNU (5x6)
- Package / Case: 8-PowerTDFN
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