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TRS12A65F,S1Q

Toshiba Semiconductor and Storage
TRS12A65F,S1Q Preview
Toshiba Semiconductor and Storage
PB-F DIODE TO-220-2L V=650 IF=12
$5.86
Available to order
Reference Price (USD)
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$5.86000
500+
$5.8014
1000+
$5.7428
1500+
$5.6842
2000+
$5.6256
2500+
$5.567
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Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 12A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 60 µA @ 650 V
  • Capacitance @ Vr, F: 44pF @ 650V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F-2L
  • Operating Temperature - Junction: 175°C (Max)

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