TRS3E65F,S1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PB-F DIODE TO-220-2L V=650 IF=3A
$2.08
Available to order
Reference Price (USD)
1+
$2.08000
500+
$2.0592
1000+
$2.0384
1500+
$2.0176
2000+
$1.9968
2500+
$1.976
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic designs with TRS3E65F,S1Q Single Rectifier Diodes by Toshiba Semiconductor and Storage, offering unparalleled efficiency and durability. Ideal for power supplies, inverters, and DC-DC converters, these diodes feature ultra-low leakage and high junction temperature tolerance. Their robust design ensures stable performance in extreme conditions. Whether for prototyping or mass production, Toshiba Semiconductor and Storage has you covered. Request a quote or technical support today!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 20 µA @ 650 V
- Capacitance @ Vr, F: 12pF @ 650V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: 175°C (Max)
Related Products
Diodes Incorporated
RS1DB-13-F
Vishay General Semiconductor - Diodes Division
BYS12-90-E3/TR3
Vishay General Semiconductor - Diodes Division
BAV20W-HE3-18
STMicroelectronics
STTH810FP
Micro Commercial Co
SMD26PL-TP
Vishay General Semiconductor - Diodes Division
VS-15ETX06-1-M3
Taiwan Semiconductor Corporation
S12JC V7G
NTE Electronics, Inc
NTE5815
Vishay General Semiconductor - Diodes Division
VSS8D5M15-M3/I
Comchip Technology