TRS8E65F,S1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DODE SCHOTTKY 650V TO220
$3.98
Available to order
Reference Price (USD)
1+
$3.98000
500+
$3.9402
1000+
$3.9004
1500+
$3.8606
2000+
$3.8208
2500+
$3.781
Exquisite packaging
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Revolutionize your power electronics with Toshiba Semiconductor and Storage's TRS8E65F,S1Q Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. Toshiba Semiconductor and Storage provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 40 µA @ 650 V
- Capacitance @ Vr, F: 28pF @ 650V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: 175°C (Max)
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