TSM180N03PQ33 RGG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 30V 25A 8PDFN
$1.02
Available to order
Reference Price (USD)
5,000+
$0.16110
10,000+
$0.15554
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance TSM180N03PQ33 RGG from Taiwan Semiconductor Corporation, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, TSM180N03PQ33 RGG delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 21W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (3x3)
- Package / Case: 8-PowerWDFN
Related Products
Fairchild Semiconductor
FDB4020P
onsemi
NTP095N65S3H
Infineon Technologies
IPLK60R600PFD7ATMA1
Vishay Siliconix
SQW61N65EF-GE3
STMicroelectronics
STP5NK52ZD
IXYS
IXTA270N04T4
Infineon Technologies
IPI90R800C3XKSA1
STMicroelectronics
STY105NM50N
Vishay Siliconix
SIR112DP-T1-RE3
onsemi