TSM250NB06DCR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DUAL N-CHANNEL POWER MOSFET 60V,
$2.72
Available to order
Reference Price (USD)
1+
$2.72000
500+
$2.6928
1000+
$2.6656
1500+
$2.6384
2000+
$2.6112
2500+
$2.584
Exquisite packaging
Discount
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The TSM250NB06DCR RLG from Taiwan Semiconductor Corporation is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, TSM250NB06DCR RLG delivers consistent quality. Contact us now to learn more and secure your supply of Taiwan Semiconductor Corporation s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 30A (Tc)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1461pF @ 30V
- Power - Max: 2W (Ta), 48W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PDFN (5x6)
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