TSM650P02CX RFG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET P-CHANNEL 20V 4.1A SOT23
$0.74
Available to order
Reference Price (USD)
3,000+
$0.09648
6,000+
$0.09112
15,000+
$0.08308
30,000+
$0.07772
75,000+
$0.07504
Exquisite packaging
Discount
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Enhance your circuit performance with TSM650P02CX RFG, a premium Transistors - FETs, MOSFETs - Single from Taiwan Semiconductor Corporation. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust TSM650P02CX RFG for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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