TSM900N06CH X0G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 60V 11A TO251
$1.80
Available to order
Reference Price (USD)
1+
$0.52000
10+
$0.43700
100+
$0.32760
500+
$0.24024
1,875+
$0.18564
3,750+
$0.16926
5,625+
$0.15834
Exquisite packaging
Discount
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Discover TSM900N06CH X0G, a versatile Transistors - FETs, MOSFETs - Single solution from Taiwan Semiconductor Corporation, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Stub Leads, IPak
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