TW027N65C,S1F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
G3 650V SIC-MOSFET TO-247 27MOH
$23.78
Available to order
Reference Price (USD)
1+
$23.78000
500+
$23.5422
1000+
$23.3044
1500+
$23.0666
2000+
$22.8288
2500+
$22.591
Exquisite packaging
Discount
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Experience the power of TW027N65C,S1F, a premium Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, TW027N65C,S1F is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 37mOhm @ 29A, 18V
- Vgs(th) (Max) @ Id: 5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 18 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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