TW045N120C,S1F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
G3 1200V SIC-MOSFET TO-247 45MO
$24.84
Available to order
Reference Price (USD)
1+
$24.84000
500+
$24.5916
1000+
$24.3432
1500+
$24.0948
2000+
$23.8464
2500+
$23.598
Exquisite packaging
Discount
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Discover high-performance TW045N120C,S1F from Toshiba Semiconductor and Storage, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, TW045N120C,S1F delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id: 5V @ 6.7mA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 182W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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