TW048N65C,S1F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
G3 650V SIC-MOSFET TO-247 48MOH
$17.09
Available to order
Reference Price (USD)
1+
$17.09000
500+
$16.9191
1000+
$16.7482
1500+
$16.5773
2000+
$16.4064
2500+
$16.2355
Exquisite packaging
Discount
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Toshiba Semiconductor and Storage presents TW048N65C,S1F, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, TW048N65C,S1F delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id: 5V @ 1.6mA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 132W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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