TW060N120C,S1F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
G3 1200V SIC-MOSFET TO-247 60MO
$20.79
Available to order
Reference Price (USD)
1+
$20.79000
500+
$20.5821
1000+
$20.3742
1500+
$20.1663
2000+
$19.9584
2500+
$19.7505
Exquisite packaging
Discount
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Experience the power of TW060N120C,S1F, a premium Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, TW060N120C,S1F is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 78mOhm @ 18A, 18V
- Vgs(th) (Max) @ Id: 5V @ 4.2mA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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