TW107N65C,S1F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
G3 650V SIC-MOSFET TO-247 107MO
$10.08
Available to order
Reference Price (USD)
1+
$10.08000
500+
$9.9792
1000+
$9.8784
1500+
$9.7776
2000+
$9.6768
2500+
$9.576
Exquisite packaging
Discount
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Upgrade your electronic designs with TW107N65C,S1F by Toshiba Semiconductor and Storage, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, TW107N65C,S1F ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 18V
- Vgs(th) (Max) @ Id: 5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 76W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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