UF3C065080K4S
UnitedSiC
UnitedSiC
MOSFET N-CH 650V 31A TO247-4
$9.03
Available to order
Reference Price (USD)
1+
$9.03000
500+
$8.9397
1000+
$8.8494
1500+
$8.7591
2000+
$8.6688
2500+
$8.5785
Exquisite packaging
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Enhance your circuit performance with UF3C065080K4S, a premium Transistors - FETs, MOSFETs - Single from UnitedSiC. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust UF3C065080K4S for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: -
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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