UF3C120150K4S
UnitedSiC
UnitedSiC
SICFET N-CH 1200V 18.4A TO247-4
$10.55
Available to order
Reference Price (USD)
1+
$10.55000
500+
$10.4445
1000+
$10.339
1500+
$10.2335
2000+
$10.128
2500+
$10.0225
Exquisite packaging
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UnitedSiC presents UF3C120150K4S, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, UF3C120150K4S delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V
- Vgs(th) (Max) @ Id: 5.5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 25.7 nC @ 12 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 166.7W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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