UF3SC065030B7S
UnitedSiC
UnitedSiC
650V/30MOHM, SIC, STACKED FAST C
$19.54
Available to order
Reference Price (USD)
1+
$19.54000
500+
$19.3446
1000+
$19.1492
1500+
$18.9538
2000+
$18.7584
2500+
$18.563
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of UF3SC065030B7S, a premium Transistors - FETs, MOSFETs - Single from UnitedSiC. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, UF3SC065030B7S is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Related Products
IXYS
IXFX32N90P
Toshiba Semiconductor and Storage
SSM3K59CTB,L3F
onsemi
FDA24N50
Vishay Siliconix
IRF9640STRLPBF
IXYS
IXFK66N85X
Diodes Incorporated
DMN65D8LFB-7B
Vishay Siliconix
SIHG73N60E-E3
Infineon Technologies
IPA60R520CP
Toshiba Semiconductor and Storage
TPH2R306NH1,LQ
Texas Instruments