UGB8JT-E3/81
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO263AB
$1.63
Available to order
Reference Price (USD)
1+
$1.63000
500+
$1.6137
1000+
$1.5974
1500+
$1.5811
2000+
$1.5648
2500+
$1.5485
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-level performance with Vishay General Semiconductor - Diodes Division's UGB8JT-E3/81 Single Rectifier Diodes, designed for high-power applications. These diodes provide excellent rectification efficiency, making them suitable for solar panels, electric vehicles, and UPS systems. Key features include high current density, fast recovery, and superior thermal management. Vishay General Semiconductor - Diodes Division stands by its products with rigorous testing and quality assurance. Need assistance? Contact our sales team now!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 30 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
IXYS
DSEI60-12A
onsemi
SMBD1031T
Diodes Incorporated
SDM02M30LP3-7B
Microchip Technology
LSM150JE3/TR13
Taiwan Semiconductor Corporation
TSD1GH
Rohm Semiconductor
RB521CS-30T2RA
Wolfspeed, Inc.
E4D20120G
Rohm Semiconductor
RFN5BM6STL
SURGE
ES2GA
Vishay General Semiconductor - Diodes Division