UJ3N065025K3S
UnitedSiC
UnitedSiC
650V 25 MOHM SIC JFET, G3, N-ON,
$20.47
Available to order
Reference Price (USD)
1+
$20.47000
500+
$20.2653
1000+
$20.0606
1500+
$19.8559
2000+
$19.6512
2500+
$19.4465
Exquisite packaging
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For designers requiring robust EMC performance, UnitedSiC's UJ3N065025K3S JFET transistors incorporate advanced shielding against RF interference without compromising transconductance. The patented guard ring design reduces substrate noise coupling by 18dB compared to conventional models. Ideal for spectrum analyzers and base station equipment where signal purity is paramount. Register for our engineer portal to access SPICE models and evaluation board schematics featuring these innovative components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 650 V
- Drain to Source Voltage (Vdss): 650 V
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: 85 A
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 100V
- Resistance - RDS(On): 33 mOhms
- Power - Max: 441 W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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