UJ3N120035K3S
UnitedSiC
UnitedSiC
1200V 35 MOHM SIC JFET, G3, N-ON
$29.30
Available to order
Reference Price (USD)
1+
$29.30000
500+
$29.007
1000+
$28.714
1500+
$28.421
2000+
$28.128
2500+
$27.835
Exquisite packaging
Discount
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UnitedSiC's UJ3N120035K3S JFET transistors redefine reliability in Discrete Semiconductor Products, offering unmatched linearity for demanding industrial applications. Engineered with rugged construction and ESD protection, these components excel in harsh environments while maintaining low distortion. Typical applications include military communications, automotive systems, and test equipment where signal fidelity is critical. Request free samples or discuss your design needs our experts will guide you through UnitedSiC's extensive JFET portfolio.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 1200 V
- Drain to Source Voltage (Vdss): 1200 V
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: 63 A
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 2145pF @ 100V
- Resistance - RDS(On): 45 mOhms
- Power - Max: 429 W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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