ULN2803APG,CN
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 8NPN DARL 50V 0.5A 18DIP
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Maximize efficiency with Toshiba Semiconductor and Storage's ULN2803APG,CN BJT Arrays, engineered for precision and reliability. These arrays boast low power consumption, high current capacity, and excellent thermal characteristics, making them a top choice for power supply and signal processing circuits. Ideal for telecommunications, robotics, and IoT devices. Don't miss out reach out to our sales team for more details and special offers!
Specifications
- Product Status: Obsolete
- Transistor Type: 8 NPN Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
- Power - Max: 1.47W
- Frequency - Transition: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 18-DIP (0.300", 7.62mm)
- Supplier Device Package: 18-DIP
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