UMD9NTR
Rohm Semiconductor
Rohm Semiconductor
TRANS NPN/PNP PREBIAS 0.15W UMT6
$0.48
Available to order
Reference Price (USD)
3,000+
$0.08640
6,000+
$0.08160
15,000+
$0.07440
30,000+
$0.06960
75,000+
$0.06720
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience precision engineering with Rohm Semiconductor's UMD9NTR Bipolar Junction Transistor Arrays, the optimal solution for space-efficient designs. These pre-biased components eliminate external resistor needs while providing predictable performance in amplification and switching roles. Application sectors include automotive electronics, power tools, and renewable energy systems where reliability is paramount. The product family offers multiple configuration options, all featuring low quiescent current, high gain bandwidth product, and robust EMC performance. Rohm Semiconductor provides comprehensive technical resources for UMD9NTR integration. Take the next step request a quote or design consultation through our convenient inquiry portal!
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6
Related Products
Toshiba Semiconductor and Storage
RN1905,LXHF(CT
Toshiba Semiconductor and Storage
RN1703JE(TE85L,F)
Rohm Semiconductor
EMH25T2R
Panasonic Electronic Components
XN0421300L
Toshiba Semiconductor and Storage
RN2505TE85LF
Diodes Incorporated
DDA124EUQ-7-F
Toshiba Semiconductor and Storage
RN1906,LF(CT
Rohm Semiconductor
IMB3AT110
Toshiba Semiconductor and Storage
RN4905FE,LXHF(CT
Toshiba Semiconductor and Storage